GP ISO-TEST .Waf
Measurement system for checking the chemical edge isolation quality of wafers
overview

Situation

The functional principle of a solar cell is based on the separation of light-generated charge carriers at the interface between a p and n-conducting layer. The p/n junction is usually created by diffusion of phosphor. During the process, an unwanted emitter is created on the back of the cell which, if it is not separated from the front, could cause a short-circuit within the cell. Thus, the edges of the wafer are isolated using either laser or etching processes.
The GP ISO-TEST .Waf laboratory tool carefully checks isolation resistance between front and rear side of the wafer, offering a reliable process control.

The measuring tool is not only distinguished by its functionality. The innovative product design is demonstrated by its improved ease of use, a higher degree of measurement accuracy and extended functionality along with an ergonomic design and a highly refined exterior. These features were decisive factors for the Jury of the iF product design award 2012 which was awarded to GP ISO-TEST .Waf.

Principle

  • Spring-loaded contact pins, recessed in suspended plastic plates, for contacting the wafer from top and bottom

Advantages

  • Edge isolation resistance is measured automatically one at the time and may also be measured simultaneously

Technical Data

Topic

Description

Samples to be measured

- Mono- and multi-crystalline wafers

- Square or pseudo square

- Textured or non-textured surface

- Diffused layer (n+p or p+n)

- Wafers without contacts

- Edge-isolated

Wafer size

156 mm
125 mm, optional on request

Measurements

Testing of edge isolation resistance by 2-point probing

Sample preparation

Wafers after diffusion and edge isolation

Measured area

Whole wafer

Measurement time

approx. 1 sec. per  wafer

Note: All technical details are subject to change without prior notice. Only technical specifications contained in an offer are binding.